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NCP3063BDR2G onsemi

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NCP3063BDR2G onsemi

Description : NCP3063BDR2G onsemi SOIC-8

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Here is the English information on the NCP3063BDR2G chip:

  • Breakdown Voltage: 30V
  • On-Resistance: 2.0 Ω (max)
  • Continuous Drain Current: 3A
  • Fast Switching Speeds
  • SOT-223 (SC-70) Small Outline Transistor Package

The NCP3063BDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 3A
  • Low on-resistance enables high conduction with minimal losses
  • Fast switching improves conversion efficiency at high frequencies
  • Compact SOT-223 package saves space for board-level designs

Common Applications:

  • DC/DC converters, voltage regulators
  • Battery chargers/protection below 3A loads
  • Low power switching circuits

Benefits include the ability to efficiently switch up to 3A in a small, surface mount package well-suited for space-constrained power designs. Its attributes make it suitable for various power supply and management applications under 3A loads.

In summary, the NCP3063BDR2G provides versatile 3A switching capabilities in a compact footprint.


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